Wafer Edge Detection in HJT Cells with SinceVision 3D Laser Profiler
When silicon wafers overlap on the carrier, the suction cup of the robot in the loading and unloading process will crush the silicon wafers, causing damage to the silicon wafers. If fragments and foreign objects enter, it will easily contaminate the vacuum chamber after the high-temperature process, affecting production and increasing maintenance costs. Therefore, it is necessary to control the overlapping of silicon wafers on the carrier.
· Overlapping Wafers: Misalignment and overlapping during robot handling cause wafer breakage, leading to increased defects.
· Contamination Hazards: Fragments and foreign particles from broken wafers risk contaminating the vacuum chamber, disrupting production and escalating maintenance costs.
· High-Temperature Sensitivity: Misaligned wafers in high-temperature processes can lead to further damage and operational inefficiencies.
SinceVision Solution: SRI7700 3D Laser Profiler
Camera Selection
Model number | SRI7700 | |||
Reference distance (CD) | 700mm | |||
Measuring range | Z-axis height (FS) | +140mm, -224mm (FS=315mm) | ||
X-axis width | Near side | 357mm | ||
Reference distance | 405mm | |||
Remote side | 460mm | |||
Light source | Light source wavelength | 450nm | ||
Laser class | 3R | |||
Laser output power | 50mW | |||
Repetition accuracy | Z-axis (height) | 10μm | ||
X-axis (width) | 37.5μm | |||
linearity | Z-axis (height) | ±0.02% of F.S. | ||
Contour data interval | X-axis (width) | 150μm | ||
X-axis contour points | 3200 | |||
Scanning speed (Hz) | 1500-20000Hz | |||
Dimension (mm) | 600 x 58 x 86mm | |||
Weight (g) | 3000 | |||
Temperature characteristic | 0.01% F.S./℃ | |||
Encoder input | Differential encoder (trigger)④, start signal⑤ | |||
Input/output | One 100Base-TX/1000Base-T Ethernet interface | |||
Input voltage | DC 24V(36W) | |||
Operation Temperature | 0~50℃ | |||
Storage Temperature | -20~70℃ | |||
Working Humidity | 35% to 85% without condensation | |||
ESD Protection | Contact discharge 4kV, air discharge 8kV, in accordance with IEC 61000-4-2 standards | |||
EFT protection | Power port 2kV/5 or 100kHz, signal port 1kV/5 or 100kHz, in accordance with IEC 61000-4-4 standards | |||
Impact | 15Gs/6ms per axis, in accordance with IEC 68-2-27 Ea standard | |||
Vibration | (10-150Hz), compliant with IEC 68-2-6 Fc standard | |||
degrees of protection provided by enclosure | IP67, in accordance with IEC 60529 standard | |||
Data cable (network cable) model | Type L: SCB-HNET-HR2Z-3m/6m/10m Type I: SCB-HNET-HB2Z-3m/6m/10m | |||
Data cable (IO cable) model | Type L: SCB-HIO-HR2Z-3m/6m/10m Type I: SCB-HIO-HB2Z-3m/6m/10m |